Aluminum Nitride Substrate

Aluminum nitride ceramic substrate is a new type of substrate material. The lattice constants of aluminum nitride crystals are a=0.3110nm, c=0.4890nm, in a hexagonal crystal system. It is a covalent compound based on the tetrahedral structure unit of aluminum nitride, possessing excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon, among a series of other excellent properties. It is considered an ideal choice material for the next generation of high integration semiconductor substrates and electronic packaging.

Aluminum Nitride Substrate

Aluminum nitride ceramic substrate is a new type of substrate material. The lattice constants of aluminum nitride crystals are a=0.3110nm, c=0.4890nm, in a hexagonal crystal system. It is a covalent compound based on the tetrahedral structure unit of aluminum nitride, possessing excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon, among a series of other excellent properties. It is considered an ideal choice material for the next generation of high integration semiconductor substrates and electronic packaging.

Aluminum Nitride Substrate

Aluminum nitride ceramic substrate is a new type of substrate material. The lattice constants of aluminum nitride crystals are a=0.3110nm, c=0.4890nm, in a hexagonal crystal system. It is a covalent compound based on the tetrahedral structure unit of aluminum nitride, possessing excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon, among a series of other excellent properties. It is considered an ideal choice material for the next generation of high integration semiconductor substrates and electronic packaging.

Aluminum nitride modified powder

The anti-hydrolysis treatment of AlN powder is mainly by means of chemical bonding or physical adsorption to coat AlN particles or form a thin reaction layer to prevent the hydrolysis reaction between aluminum nitride powder and water. The aluminum nitride powder was modified by acid solution, and the acid and hydroxyl group on the surface of the aluminum nitride powder were esterified to form a protective film on the surface of AlN particles. Good hydrophobicity, strong water resistance, can greatly improve the application performance of products.