Aluminum Nitride Substrate

Aluminum nitride ceramic substrate is a new type of substrate material. The lattice constants of aluminum nitride crystals are a=0.3110nm, c=0.4890nm, in a hexagonal crystal system. It is a covalent compound based on the tetrahedral structure unit of aluminum nitride, possessing excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon, among a series of other excellent properties. It is considered an ideal choice material for the next generation of high integration semiconductor substrates and electronic packaging.

Aluminum Nitride Substrate

Aluminum nitride ceramic substrate is a new type of substrate material. The lattice constants of aluminum nitride crystals are a=0.3110nm, c=0.4890nm, in a hexagonal crystal system. It is a covalent compound based on the tetrahedral structure unit of aluminum nitride, possessing excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon, among a series of other excellent properties. It is considered an ideal choice material for the next generation of high integration semiconductor substrates and electronic packaging.

Aluminum Nitride Substrate

Aluminum nitride ceramic substrate is a new type of substrate material. The lattice constants of aluminum nitride crystals are a=0.3110nm, c=0.4890nm, in a hexagonal crystal system. It is a covalent compound based on the tetrahedral structure unit of aluminum nitride, possessing excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon, among a series of other excellent properties. It is considered an ideal choice material for the next generation of high integration semiconductor substrates and electronic packaging.

Ceramic substrate

Aluminum nitride ceramic substrate is a new substrate material. The lattice constant of aluminum nitride crystal is a=0.3110nm, c=0.4890nm, hexagonal crystal system, based on aluminum nitride tetrahedral structural unit covalent bonding compound of brazed zinc ore. With a series of excellent properties such as good thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxic, and matching with the thermal expansion coefficient of silicon, it is considered to be the ideal material for a new generation of highly integrated semiconductor substrates and electronic packages.